Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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An atomistic simulation based on the non-equilibrium Green’s function formalism is employed. Mahdi Pourfath was born in Tehran, Iran, in He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
The device response was studied for a wide range of photon energies. Mahdi Pourfath was born in Tehran, Iran, in The quasi-static approximation QSA was used to investigate the dynamic response of these devices. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes. Optical Properties of Graphene Nanoribbons.
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Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys. Their electronic properties exhibit a dependence on the ribbon direction and width.
All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained.
All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained. Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility. Looking for beautiful books? Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.
One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.
Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel. The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. His research interests include nanoelectronics, quantum transport, and two-dimensionals.
Institute for Microelectronics – Annual Review
By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes. In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium.
Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to porfath ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction.
Product details Format Paperback pages Dimensions x x Other books in this series. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for pourcath sensitive strain gauges.
Even in the presence of extrinsic scattering sources, the gauge factors of these materials are maydi larger than those reported for most of the materials typically used for strain gauges.
The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation
Erasmus Langer Siegfried Selberherr. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising mahdu and optical properties for future electronic applications. In these structures tunneling between source and drain is controlled by the gate-source voltage. Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector.
The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys.
The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility. Computational Single-Electronics Christoph Wasshuber.
He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs.