Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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L Irf6630 die contact. Prev Next General features. Zero Gate Voltage Drain Current. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Safe operating area for TO Figure 3.
Body Diode Reverse Recovery Time. Continuous Source-Drain Diode Current.
Static drain-source on resistance Figure Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. The TOAB package is universally preferred for all. The TOAB package is universally preferred for all commercial-industrial applications datahseet power dissipation levels to approximately 50 W.
Switching times test circuit for resistive load Figure Repetitive rating; pulse width limited by maximum junction temperature see fig.
Copy your embed code and put on your site: These packages have a Lead-free second level interconnect. I SM p – n junction diode. The maximum ratings related to soldering conditions are also marked on the inner box label. Soldering Recommendations Peak Temperature.
IRF datasheet and specification datasheet. Gate charge vs gate-source voltage Figure All other trademarks are the property of their respective owners. Pulse width limited by safe operating area 2. Gate charge test circuit Figure Single Pulse Avalanche Energy b. Pulsed Diode Forward Current a.
V DS Temperature Coefficient. Contents Contents 1 Electrical ratings. The low thermal resistance. Download datasheet Kb Share this page. IRF datasheet and specification datasheet Download datasheet. Case-to-Sink, Flat, Greased Surface.
N-channel V – 0.
Repetitive Avalanche Irf603 a. Thermal impedance for TO Figure 4. Unclamped Inductive load test circuit Figure Pulsed Drain Current a. Drain-Source Body Diode Characteristics.